dms3016sssa document number: ds35073 rev. 1 - 2 1 of 6 www.diodes.com october 2010 ? diodes incorporated dms3016sss a n-channel enhancement mode mosfet with schottky diode features ? diofet utilizes a unique patented process to monolithically integrate a mosfet and a schottky in a single die to deliver: ? low r ds(on) - minimizes conduction losses ? ultra low v sd ? enhanced to reduce losses due to body diode conduction ? low q rr - lower q rr of the integrated schottky reduces body diode switching losses ? low gate capacitance (q g /q gs ) ratio ? reduces risk of shoot- through or cross conduction currents at high frequencies ? avalanche rugged ? i ar and e ar rated ? lead free, rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: so-8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram below ? weight: 0.072 grams (approximate) ordering information (note 3) part number case packaging dms3016sssa-13 so-8 2500 / tape & reel notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information top view top view internal schematic s d d g d d s s logo part no. year: ?09? = 2009 xth week: 01 ~ 53 1 4 8 5 s3016sa yy ww year: ?10? = 2010
dms3016sssa document number: ds35073 rev. 1 - 2 2 of 6 www.diodes.com october 2010 ? diodes incorporated dms3016sss a maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 30 v gate-source voltage v gss 12 v continuous drain current (note 4) v gs = 4.5v steady state t a = 25c t a = 85c i d 9.8 6.3 a pulsed drain current (note 5) i dm 90 a avalanche current (note 5) (note 6) i ar 13 a repetitive avalanche energy (note 5) (note 6) l = 0.3mh e ar 25.4 mj thermal characteristics characteristic symbol value unit power dissipation (note 4) p d 1.54 w thermal resistance, junction to ambient @t a = 25c (note 4) r ja 81 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @ t a = 25c unless otherwise stated characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 250 p a zero gate voltage drain current i dss - - 1.0 ma v ds = 30v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 12v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 1.0 - 2.3 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 9 13 m v gs = 10v, i d = 9.8a - 11 16 v gs = 4.5v, i d = 9.8a forward transfer admittance |y fs | - 11 - s v ds = 5v, i d = 9.8a diode forward voltage v sd - 0.35 0.6 v v gs = 0v, i s = 1a maximum body-diode + schottky continuous current i s - - 5 a - dynamic characteristics (note 8) input capacitance c iss - 1849 - pf v ds =15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 158 - pf reverse transfer capacitance c rss - 123 - pf gate resistance r g 0.53 2.68 4.82 v ds =0v, v gs = 0v, f = 1mhz total gate charge v gs = 4.5v q g - 18.5 - nc v ds = 15v, v gs = 10v, i d = 9.8a total gate charge v gs = 10v q g - 43 - nc gate-source charge q g s - 4.7 - nc gate-drain charge q g d - 4.0 - nc turn-on delay time t d ( on ) - 6.62 - ns v gs = 10v, v ds = 10v, r g = 3 ? , r l = 1.2 ? turn-on rise time t r - 8.73 - ns turn-off delay time t d ( off ) - 36.41 - ns turn-off fall time t f - 4.69 - ns notes: 4. device mounted on minimum recommended layout. the value in any given application depends on the user?s specific board design. 5. repetitive rating, pulse width limited by junction temperature. 6. i ar and e ar rating are based on low frequency and duty cycles to keep t j = 25c 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing.
dms3016sssa document number: ds35073 rev. 1 - 2 3 of 6 www.diodes.com october 2010 ? diodes incorporated dms3016sss a 0 0.5 1 1.5 2 fig. 1 typical output characteristic v , drain-source voltage (v) ds 0 10 15 20 25 30 i, d r ain c u r r en t (a) d 5 v = 2.0v gs v = 2.2v gs v = 2.5v gs v = 3.0v gs v = 3.5v gs v = 4.5v gs v = 4.0v gs fig. 2 typical transfer characteristic v , gate-source voltage (v) gs 0 1 1.5 2 2.5 3 0.5 0 5 10 15 20 25 30 i, d r ain c u r r en t (a) d v = 85c gs v = 125c gs v = 25c gs v = -55c gs v = 150c gs v = 5v ds 01 02 0 15 25 30 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d 5 0.05 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 0 0.04 0.01 0.02 0.03 v = 2.5v gs v = 4.5v gs v = 10v gs 0 5 10 15 20 25 30 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature 0 0.01 0.02 0.04 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 0.03 t = 85c a t = 25c a t = -55c a t = 150c a v = 4.5v gs t = 125c a fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson 0.6 0.8 1.0 1.2 1.4 1.6 v = 4.5v i = 10a gs d v = 10v i = 20a gs d fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.01 0.03 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) dson r , d r ai n -s o u r c e o n - r esis t a n c e ( ) dson 0.02 v = 4.5v i = 10a gs d v = 10v i = 20a gs d
dms3016sssa document number: ds35073 rev. 1 - 2 4 of 6 www.diodes.com october 2010 ? diodes incorporated dms3016sss a fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.5 1.0 1.5 2.0 2.5 3.0 v, g a t e t h r es h o ld v o l t a g e (v) gs(th) i = 100ma d 0 4 8 12 16 20 0 0.4 0.6 0.8 1.0 1.2 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd 0.2 i, s o u r c e c u r r e n t (a) s t = 25c a 0 5 10 15 20 25 30 fig. 9 typical total capacitance v , drain-source voltage (v) ds 10 1,000 10,000 c , c a p a c i t a n c e (p f ) 100 c iss c rss c oss f = 1mhz 01 02 03 0 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 10,000 i, leaka g e c u r r e n t (a) dss t = 25c a t = 85c a t = 125c a 0 5 10 15 20 25 30 35 40 45 fig. 11 gate-charge characteristics q , total gate charge (nc) g 0 2 4 6 8 10 v, g a t e-s o u r c e v o l t a g e (v) gs v = 15v i = 12.7a ds d
dms3016sssa document number: ds35073 rev. 1 - 2 5 of 6 www.diodes.com october 2010 ? diodes incorporated dms3016sss a 0.001 0.01 0.1 1 10 100 fig. 12 transient thermal response t , pulse duration time (s) 1 0.0001 1,000 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 80c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5 package outline dimensions suggested pad layout so-8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 0 8 all dimensions in mm dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0.254 x c1 c2 y
dms3016sssa document number: ds35073 rev. 1 - 2 6 of 6 www.diodes.com october 2010 ? diodes incorporated dms3016sss a important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2010, diodes incorporated www.diodes.com
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